caa a22 4500 469092041 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19921001xx s 000 0 eng 10.1007/BF02684201 doi (NATIONALLICENCE)springer-10.1007/BF02684201 Optimization of undoped gaas by low-pressure OMVPE using trimethylgallium [Elektronische Daten] [Barabara Landini, Farid Agahi, Kei Lau] Optimization of the electrical characteristics of undoped GaAs grown by low-pressure OMVPE using trimethylgallium is presented. The use of a lower growth pressure was found to reduce both then- andp-type background impurity incorporation. Both electrical and optical measurements revealed that the arsine partial pressure controls the background impurity level during low-pressure growth. Variation of this parameter allowed the attainment of both high mobility (maximum of 136,000 cm2/V-sec at 77 K in this study) and high resistivity layers suitable for field-effect transistor buffers. AlGaAs/ GaAs two-dimensional electron gas structures and GaAs MESFETs using the high resistivity buffer layers showed excellent electrical characteristics. Similar trends were obtained using different AsH3 sources despite variations in purity. TMS, 1992 Undoped GaAs nationallicence low-pressure organometallic chemical vapor deposition nationallicence Landini Barabara Compound Semiconductor Laboratory Department of Electrical and Computer Engineering, University of Massachusetts, 01003, Amherst, Massachusetts aut Agahi Farid Compound Semiconductor Laboratory Department of Electrical and Computer Engineering, University of Massachusetts, 01003, Amherst, Massachusetts aut Lau Kei Compound Semiconductor Laboratory Department of Electrical and Computer Engineering, University of Massachusetts, 01003, Amherst, Massachusetts aut Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 947-953 0361-5235 21:10<947 1992 21 11664 https://doi.org/10.1007/BF02684201 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02684201 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Landini Barabara Compound Semiconductor Laboratory Department of Electrical and Computer Engineering, University of Massachusetts, 01003, Amherst, Massachusetts aut NATIONALLICENCE 700 1- Agahi Farid Compound Semiconductor Laboratory Department of Electrical and Computer Engineering, University of Massachusetts, 01003, Amherst, Massachusetts aut NATIONALLICENCE 700 1- Lau Kei Compound Semiconductor Laboratory Department of Electrical and Computer Engineering, University of Massachusetts, 01003, Amherst, Massachusetts aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 947-953 0361-5235 21:10<947 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer