caa a22 4500 469092068 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19921001xx s 000 0 eng 10.1007/BF02684210 doi (NATIONALLICENCE)springer-10.1007/BF02684210 Theory of te precipitation and related effects in CdTe Crystals [Elektronische Daten] [R. Yadava, R. Bagai, W. Borle] A thermodynamic calculation is presented which explains the origin of often reported large stress fields in and around Te precipitates and associated punching of dislocation loops in star like patterns. The calculation is based on the consideration that the stoichiometric deviation in Te saturated crystals are accommodated by Te interstitials, Cd multivacancy complexes and Te antisites; the Te interstitials are most mobile of them, and dominate the precipitation process; and the precipitates when they appear first are in droplet form. The droplet state is modelled on the basis of the Lennard-Jones 6-12 interaction potential. The droplet growth is envisaged to occur via the following two processes operating in tandem: first, capture of excess Te interstitials to cause droplet overpressurization, and then, punching of interstitial dislocation loops whenever the pressure exceeds a threshold value. The flow of Te interstitials into the droplets is driven by the difference between their formation energies in the lattice and the free energy change of the droplets per Te atom added. It is shown that the achievable droplet pressures far exceed that required for the loop punching and sustaining the growth cycle. The occurrence of varying precipitate morphologies are explained, and the possibility of nucleating high presssure Te phases is examined. Some experimental evidence is also presented which corroborate the theoretical arguments involved. TMS, 1992 Te precipitation nationallicence CdTe crystals nationallicence Yadava R. Solid State Physics Laboratory, Lucknow Road, 110054, Delhi, India aut Bagai R. Solid State Physics Laboratory, Lucknow Road, 110054, Delhi, India aut Borle W. Solid State Physics Laboratory, Lucknow Road, 110054, Delhi, India aut Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 1001-1016 0361-5235 21:10<1001 1992 21 11664 https://doi.org/10.1007/BF02684210 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02684210 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Yadava R. Solid State Physics Laboratory, Lucknow Road, 110054, Delhi, India aut NATIONALLICENCE 700 1- Bagai R. Solid State Physics Laboratory, Lucknow Road, 110054, Delhi, India aut NATIONALLICENCE 700 1- Borle W. Solid State Physics Laboratory, Lucknow Road, 110054, Delhi, India aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/10(1992-10-01), 1001-1016 0361-5235 21:10<1001 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer