caa a22 4500 469092084 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19920401xx s 000 0 eng 10.1007/BF02660409 doi (NATIONALLICENCE)springer-10.1007/BF02660409 Plasma and wet chemical etching of In0.5Ga0.5P [Elektronische Daten] [J. Lothian, J. Kuo, F. Ren, S. Pearton] Dry and wet chemical etching of epitaxial In0, 5Ga0.5P layers grown on GaAs substrates by gas-source molecular beam epitaxy have been investigated. For chlorine-based dry etch mixtures (PCl3/Ar or CC12F2/Ar) the etching rate of InGaP increases linearly with dc self-bias on the sample, whereas CH4/H2-based mixtures produce slower etch rates. Selectivities of ≥500 for etching GaAs over InGaP are obtained under low bias conditions with PCl3/Ar, but the surface morphologies of InGaP are rough. Both CC12F2/Ar and CH4/H2/Ar mixtures produce smooth surface morphologies and good (≥10) selectivities for etching GaAs over InGaP. The wet chemical etching rates of InGaP in H3PO4:HC1:H2O mixtures has been systemically measured as a function of etch formulation and are most rapid (∼1 μn · min−1) for high HCl compositions. The etch rate,R, in a 1:1:1 mixture is thermally activated of the formR ∝ $$e^{ - E_a /kT} $$ , whereE a = 11.25 kCal · mole−1. This is consistent with the etching being reaction-limited at the surface. This etch mixture is selective for InGaP over GaAs. TMS, 1992 In0.5Ga0.5P nationallicence Gas-source MBE nationallicence Etching nationallicence Lothian J. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut Kuo J. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut Ren F. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut Pearton S. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut Journal of Electronic Materials Springer-Verlag 21/4(1992-04-01), 441-445 0361-5235 21:4<441 1992 21 11664 https://doi.org/10.1007/BF02660409 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660409 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lothian J. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut NATIONALLICENCE 700 1- Kuo J. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut NATIONALLICENCE 700 1- Ren F. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut NATIONALLICENCE 700 1- Pearton S. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/4(1992-04-01), 441-445 0361-5235 21:4<441 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer