caa a22 4500 469092106 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19920401xx s 000 0 eng 10.1007/BF02660408 doi (NATIONALLICENCE)springer-10.1007/BF02660408 Optical characterization of AlGaN-GaN-AlGaN quantum wells [Elektronische Daten] [S. Krishnankutty, R. Kolbas, M. Khan, J. Kuznia, J. Van Hove, D. Olson] High quality AL x Ga1−x N-GaN-Al x Ga1−x N quantum wells of different thicknesses andx values were grown by low pressure metalorganic chemical vapor deposition (LPMOCVD). The change in their emission energies (measured at 77 K by photoluminescence) as a function of both well width andx value was typical of a type I heterojunction. The experimental data was compared to theoretical calculations based on the finite square well model and the confined particle transitions were identified. The experimentally observed energy shifts differed from calculated values of then = 1 electron to heavy hole transition by a constant amount (for a givenx value) attributed to strain in the AlGaN-GaN system. Also, an estimate of the critical thickness in the AlGaN-GaN system was determined based on the Matthews and Blakeslee force balance model. TMS, 1992 LPMOCVD nationallicence Photoluminescence nationallicence Type I heterojunction nationallicence Critical thickness nationallicence Krishnankutty S. Department of Electrical & Computer Engineering, North Carolina State University, 27695, Raleigh, North Carolina aut Kolbas R. Department of Electrical & Computer Engineering, North Carolina State University, 27695, Raleigh, North Carolina aut Khan M. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut Kuznia J. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut Van Hove J. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut Olson D. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut Journal of Electronic Materials Springer-Verlag 21/4(1992-04-01), 437-440 0361-5235 21:4<437 1992 21 11664 https://doi.org/10.1007/BF02660408 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660408 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Krishnankutty S. Department of Electrical & Computer Engineering, North Carolina State University, 27695, Raleigh, North Carolina aut NATIONALLICENCE 700 1- Kolbas R. Department of Electrical & Computer Engineering, North Carolina State University, 27695, Raleigh, North Carolina aut NATIONALLICENCE 700 1- Khan M. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut NATIONALLICENCE 700 1- Kuznia J. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut NATIONALLICENCE 700 1- Van Hove J. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut NATIONALLICENCE 700 1- Olson D. APA Optics Inc., 2950 NE 84th Lane, 55434, Blaine, Minnesota aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/4(1992-04-01), 437-440 0361-5235 21:4<437 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer