caa a22 4500 469092122 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19920401xx s 000 0 eng 10.1007/BF02660410 doi (NATIONALLICENCE)springer-10.1007/BF02660410 Process characterization and evaluation of hydride VPE grown Ga x In1− x As using a Ga/In alloy source [Elektronische Daten] [Chinho Park, Vladimir Ban, Gregory Olsen, Timothy Anderson, Kenneth Quinlan] A novel, simplified hydride vapor phase epitaxy (VPE) method based on the utilization of Ga/In alloys as the group III source was studied for deposition of GaxIn1-xAs. The effects of a wide range of experimental variables (i.e., inlet mole fractions of HC1 and AsH3, deposition temperature, gas velocity, Ga/ln alloy composition, and reactor geometry) on the ternary composition and growth rate were investigated. The growth rate of Ga x In1− xAs was found to increase with increasing deposition temperature and exhibited a maximum with inlet HC1 mole fraction. The growth rate increases slightly with inlet AsH3 mole fraction and is independent of gas velocity. The Ga composition of the deposited film increased with increasing inlet HC1 mole fraction and gas velocity. Increased In concentrations were observed with increases in inlet AsH3 mole fraction and deposition temperatures. Layers of Ga0.47In0.53As lattice matched to InP were successfully grown from alloys containing 5 to 8 at.% Ga. These layers were used to produce state-of-the-artp- i- n photodetectors having the following characteristics: dark current,I d(- 5 V) = 10-20 nA; responsivity,R = 0.84-0.86 A/W; capacitance,C = 0.88-0.92 pF; breakdown voltage,V b > 40 V. This study demonstrated for the first time that a simplified hydride VPE process with a Ga/ln alloy source is capable of producing device quality epitaxial layers. TMS, 1992 GalnAs epitaxy nationallicence Hydride VPE nationallicence Alloy source nationallicence Park Chinho Chemical Engineering Department, University of Florida, 32611, Gainesville, FL aut Ban Vladimir Epitaxx, Inc., 3490 U.S. Route 1, 08540, Princeton, NJ aut Olsen Gregory Epitaxx, Inc., 3490 U.S. Route 1, 08540, Princeton, NJ aut Anderson Timothy Chemical Engineering Department, University of Florida, 32611, Gainesville, FL aut Quinlan Kenneth Rome Air Development Center, ESME, 01731-5000, Hanscom AFB, MA aut Journal of Electronic Materials Springer-Verlag 21/4(1992-04-01), 447-454 0361-5235 21:4<447 1992 21 11664 https://doi.org/10.1007/BF02660410 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660410 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Park Chinho Chemical Engineering Department, University of Florida, 32611, Gainesville, FL aut NATIONALLICENCE 700 1- Ban Vladimir Epitaxx, Inc., 3490 U.S. Route 1, 08540, Princeton, NJ aut NATIONALLICENCE 700 1- Olsen Gregory Epitaxx, Inc., 3490 U.S. Route 1, 08540, Princeton, NJ aut NATIONALLICENCE 700 1- Anderson Timothy Chemical Engineering Department, University of Florida, 32611, Gainesville, FL aut NATIONALLICENCE 700 1- Quinlan Kenneth Rome Air Development Center, ESME, 01731-5000, Hanscom AFB, MA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/4(1992-04-01), 447-454 0361-5235 21:4<447 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer