caa a22 4500 469092130 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19920401xx s 000 0 eng 10.1007/BF02660411 doi (NATIONALLICENCE)springer-10.1007/BF02660411 The pattern dependence of selectivity in low pressure selective epitaxial silicon growth [Elektronische Daten] [J. Fitch, D. Denning, D. Beard] The dependence of selectivity on HC1 flow and operating pressure for an 850° C SiH2Cl2/ HC1 based SEG process has been investigated. The polysilicon nuclei density (#/cm2 measured by optical microscope) on large unpatterned areas of deposited SiO2 was used to quantify the selectivity of different process conditions. Three distinct selectivity regimes were identified: (a) a non-selective regime with >106 nuclei/cm2, (b) a pattern dependent regime with <106 nuclei/cm2, and (c) an intrinsically selective regime with <1 nuclei/cm2. The intermediate, pattern dependent, selectivity regime was characterized by a much lower density of silicon nuclei in and around patterned areas where windows of Si are exposed, thus making a loss of selectivity more difficult to detect. This phenomenon is shown to arise from feature scale (<100 micron) lateral fluxes of gas phase species. An intrinsically selective regime suitable for VLSI manufacturing, which avoids the high nuclei density associated with the pattern dependent regime, is identified. TMS, 1992 Selective nationallicence Si nationallicence Pattern nationallicence Fitch J. Advanced Products Research and Development Laboratory, Motorola Inc., MD-K10, 3501 Ed Bluestein Blvd., 78721, Austin, TX aut Denning D. Advanced Products Research and Development Laboratory, Motorola Inc., MD-K10, 3501 Ed Bluestein Blvd., 78721, Austin, TX aut Beard D. Advanced Products Research and Development Laboratory, Motorola Inc., MD-K10, 3501 Ed Bluestein Blvd., 78721, Austin, TX aut Journal of Electronic Materials Springer-Verlag 21/4(1992-04-01), 455-462 0361-5235 21:4<455 1992 21 11664 https://doi.org/10.1007/BF02660411 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660411 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Fitch J. Advanced Products Research and Development Laboratory, Motorola Inc., MD-K10, 3501 Ed Bluestein Blvd., 78721, Austin, TX aut NATIONALLICENCE 700 1- Denning D. Advanced Products Research and Development Laboratory, Motorola Inc., MD-K10, 3501 Ed Bluestein Blvd., 78721, Austin, TX aut NATIONALLICENCE 700 1- Beard D. Advanced Products Research and Development Laboratory, Motorola Inc., MD-K10, 3501 Ed Bluestein Blvd., 78721, Austin, TX aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/4(1992-04-01), 455-462 0361-5235 21:4<455 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer