<?xml version="1.0" encoding="UTF-8"?>
<collection xmlns="http://www.loc.gov/MARC21/slim">
 <record>
  <leader>     caa a22        4500</leader>
  <controlfield tag="001">469092157</controlfield>
  <controlfield tag="003">CHVBK</controlfield>
  <controlfield tag="005">20180323133020.0</controlfield>
  <controlfield tag="007">cr unu---uuuuu</controlfield>
  <controlfield tag="008">170328e19920401xx      s     000 0 eng  </controlfield>
  <datafield tag="024" ind1="7" ind2="0">
   <subfield code="a">10.1007/BF02660412</subfield>
   <subfield code="2">doi</subfield>
  </datafield>
  <datafield tag="035" ind1=" " ind2=" ">
   <subfield code="a">(NATIONALLICENCE)springer-10.1007/BF02660412</subfield>
  </datafield>
  <datafield tag="100" ind1="1" ind2=" ">
   <subfield code="a">Desnica</subfield>
   <subfield code="D">D.</subfield>
   <subfield code="u">R. Bošković Institute, Zagreb, Croatia</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="245" ind1="1" ind2="0">
   <subfield code="a">Characterization of deep traps in semi-insulating gallium arsenide</subfield>
   <subfield code="h">[Elektronische Daten]</subfield>
   <subfield code="c">[D. Desnica]</subfield>
  </datafield>
  <datafield tag="520" ind1="3" ind2=" ">
   <subfield code="a">In this paper a number of deep traps, which play a crucial role in many macroscopic properties of semi-insulating GaAs have been characterized and analyzed. The main trap parameters (activation energy and capture cross section) were deduced by several experimental methods, based on thermally stimulated current and isothermal current transients. Results were compared with other studies of deep traps in SI GaAs performed with these and other methods as well as studies of deep levels in conductive GaAs. To enable these comparisons an analysis of the methods and usually employed calculation procedures was given as well as suggestions for the presentation of the trap parameters. It was also concluded that the observed traps are complex defects which correspond to deep traps observed by other authors in a variety of other SI GaAs materials. Some of them seem to include, as a part of the defect, a well known defect EL2 but there are also strong indications for involvement of other structural defects and/or common impurities.</subfield>
  </datafield>
  <datafield tag="540" ind1=" " ind2=" ">
   <subfield code="a">TMS, 1992</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">Semi-insulating gallium arsenide</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">TSC</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="690" ind1=" " ind2="7">
   <subfield code="a">Deep traps</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="773" ind1="0" ind2=" ">
   <subfield code="t">Journal of Electronic Materials</subfield>
   <subfield code="d">Springer-Verlag</subfield>
   <subfield code="g">21/4(1992-04-01), 463-471</subfield>
   <subfield code="x">0361-5235</subfield>
   <subfield code="q">21:4&lt;463</subfield>
   <subfield code="1">1992</subfield>
   <subfield code="2">21</subfield>
   <subfield code="o">11664</subfield>
  </datafield>
  <datafield tag="856" ind1="4" ind2="0">
   <subfield code="u">https://doi.org/10.1007/BF02660412</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="908" ind1=" " ind2=" ">
   <subfield code="D">1</subfield>
   <subfield code="a">research-article</subfield>
   <subfield code="2">jats</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">856</subfield>
   <subfield code="E">40</subfield>
   <subfield code="u">https://doi.org/10.1007/BF02660412</subfield>
   <subfield code="q">text/html</subfield>
   <subfield code="z">Onlinezugriff via DOI</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">100</subfield>
   <subfield code="E">1-</subfield>
   <subfield code="a">Desnica</subfield>
   <subfield code="D">D.</subfield>
   <subfield code="u">R. Bošković Institute, Zagreb, Croatia</subfield>
   <subfield code="4">aut</subfield>
  </datafield>
  <datafield tag="950" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="P">773</subfield>
   <subfield code="E">0-</subfield>
   <subfield code="t">Journal of Electronic Materials</subfield>
   <subfield code="d">Springer-Verlag</subfield>
   <subfield code="g">21/4(1992-04-01), 463-471</subfield>
   <subfield code="x">0361-5235</subfield>
   <subfield code="q">21:4&lt;463</subfield>
   <subfield code="1">1992</subfield>
   <subfield code="2">21</subfield>
   <subfield code="o">11664</subfield>
  </datafield>
  <datafield tag="900" ind1=" " ind2="7">
   <subfield code="a">Metadata rights reserved</subfield>
   <subfield code="b">Springer special CC-BY-NC licence</subfield>
   <subfield code="2">nationallicence</subfield>
  </datafield>
  <datafield tag="898" ind1=" " ind2=" ">
   <subfield code="a">BK010053</subfield>
   <subfield code="b">XK010053</subfield>
   <subfield code="c">XK010000</subfield>
  </datafield>
  <datafield tag="949" ind1=" " ind2=" ">
   <subfield code="B">NATIONALLICENCE</subfield>
   <subfield code="F">NATIONALLICENCE</subfield>
   <subfield code="b">NL-springer</subfield>
  </datafield>
 </record>
</collection>
