caa a22 4500 469092173 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19920401xx s 000 0 eng 10.1007/BF02660407 doi (NATIONALLICENCE)springer-10.1007/BF02660407 The role of outdiffusion in the activation of high dose Mg implantations in InP [Elektronische Daten] [W. Van Berlo, M. Ghaffari, G. Landgren] We have studied the annealing behaviour of magnesium implanted in indium phosphide. The activated fraction of dopants was found to depend strongly on implanted dose and substrate temperature during implantation. Low activation for high dose (1015 cm−2) implantations was found to be a result of pronounced outdiffusion (80%). We also found a large variation in the apparent activation energy for implantation temperatures between room temperature and 300° C. TMS, 1992 InP nationallicence Implantation nationallicence p -type doping nationallicence Anneal nationallicence Van Berlo W. Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista, Sweden aut Ghaffari M. Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista, Sweden aut Landgren G. Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista, Sweden aut Journal of Electronic Materials Springer-Verlag 21/4(1992-04-01), 431-435 0361-5235 21:4<431 1992 21 11664 https://doi.org/10.1007/BF02660407 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660407 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Van Berlo W. Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista, Sweden aut NATIONALLICENCE 700 1- Ghaffari M. Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista, Sweden aut NATIONALLICENCE 700 1- Landgren G. Swedish Institute of Microelectronics, Box 1084, S-164 21, Kista, Sweden aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/4(1992-04-01), 431-435 0361-5235 21:4<431 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer