caa a22 4500 46909219X CHVBK 20180323133020.0 cr unu---uuuuu 170328e19920401xx s 000 0 eng 10.1007/BF02660402 doi (NATIONALLICENCE)springer-10.1007/BF02660402 Structural analysis of Ge x Si1− x /Si layers by remote plasma-enhanced chemical vapor deposition on Si (100) [Elektronische Daten] [R. Qian, B. Anthony, T. Hsu, J. Irby, D. Kinosky, S. Banerjee, A. Tasch] In this work, remote plasma-enhanced chemical vapor deposition (RPCVD) has been used to grow Ge x Si1−x /Si layers on Si(100) substrates at 450° C. The RPCVD technique, unlike conventional plasma CVD, uses an Ar (or He) plasma remote from the substrate to indirectly excite the reactant gases (SiH4 and GeH4) and drive the chemical deposition reactions. In situ reflection high energy electron diffraction, selected area diffraction, and plan-view and cross-sectional transmission electron microscopy (XTEM) were used to confirm the single crystallinity of these heterostructures, and secondary ion mass spectroscopy was used to verify abrupt transitions in the Ge profile. XTEM shows very uniform layer thicknesses in the quantum well structures, suggesting a Frank/ van der Merwe 2-D growth mechanism. The layers were found to be devoid of extended crystal defects such as misfit dislocations, dislocation loops, and stacking faults, within the TEM detection limits (∼105 dislocations/cm2). Ge x Si1−x /Si epitaxial films with various Ge mole fractions were grown, where the Ge contentx is linearly dependent on the GeH4 partial pressure in the gas phase for at leastx = 0 − 0.3. The incorporation rate of Ge from the gas phase was observed to be slightly higher than that of Si (1.3:1). TMS, 1992 Ge x Si1− x /Si heteroepitaxy nationallicence Remote plasma-enhanced chemical vapor deposition (RPCVD) nationallicence Critical layer thickness nationallicence Qian R. Microelectronics Research Center, USA aut Anthony B. Microelectronics Research Center, USA aut Hsu T. Microelectronics Research Center, USA aut Irby J. Microelectronics Research Center, USA aut Kinosky D. Microelectronics Research Center, USA aut Banerjee S. Microelectronics Research Center, USA aut Tasch A. Microelectronics Research Center, USA aut Journal of Electronic Materials Springer-Verlag 21/4(1992-04-01), 395-399 0361-5235 21:4<395 1992 21 11664 https://doi.org/10.1007/BF02660402 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02660402 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Qian R. Microelectronics Research Center, USA aut NATIONALLICENCE 700 1- Anthony B. Microelectronics Research Center, USA aut NATIONALLICENCE 700 1- Hsu T. Microelectronics Research Center, USA aut NATIONALLICENCE 700 1- Irby J. Microelectronics Research Center, USA aut NATIONALLICENCE 700 1- Kinosky D. Microelectronics Research Center, USA aut NATIONALLICENCE 700 1- Banerjee S. Microelectronics Research Center, USA aut NATIONALLICENCE 700 1- Tasch A. Microelectronics Research Center, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/4(1992-04-01), 395-399 0361-5235 21:4<395 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer