caa a22 4500 469092211 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19920801xx s 000 0 eng 10.1007/BF02665522 doi (NATIONALLICENCE)springer-10.1007/BF02665522 The role of complementary species in P/Be and Ar/Be Co-implanted InP [Elektronische Daten] [Chang Jeong, Sung Kim, Byung Choe] Chemical and damage effects are used to explain the influence of complementary species on the activation of co-implanted InP. Recently Raoet al. have shown that the damage is the effective mechanism of enhancing activation efficiency and preventing in-diffusion in the P/Be and Ar/Be co-implanted InP. We have confirmed the results and further examined the role of the complementary species by varying their doses. Activation efficiencies as high as 75% and 69.5% were observed in the P/Be and Ar/Be co-implantation, respectively, which can be compared with 31.7% activation in the Be single implantation. Both activation efficiency and in-diffusion decreased as doses of P and Ar increased, that is, as the amount of damage increased. P/Be had always higher activation efficiency than that of Ar/Be when the doses of co-implants are equal. The ratio of the difference in the two activation efficiencies to that of P/Be was the largest at 1014 cm−2 of co-implant dose. This behavior was attributed to the chemical effect of the co-implanted P. Photoluminescence results near the band edge showed that the intensity of the main peaks of Be single implantation decreased with increasing P and Ar doses. TMS, 1992 InP nationallicence co-implantation nationallicence chemical effect nationallicence stoichiometry nationallicence damage effect nationallicence Hall measurement nationallicence photoluminescence nationallicence Jeong Chang Inter-University Semiconductor Research Center, Seoul National University, Seoul, Korea aut Kim Sung Inter-University Semiconductor Research Center, Seoul National University, Seoul, Korea aut Choe Byung Inter-University Semiconductor Research Center, Seoul National University, Seoul, Korea aut Journal of Electronic Materials Springer-Verlag 21/8(1992-08-01), 825-829 0361-5235 21:8<825 1992 21 11664 https://doi.org/10.1007/BF02665522 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665522 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Jeong Chang Inter-University Semiconductor Research Center, Seoul National University, Seoul, Korea aut NATIONALLICENCE 700 1- Kim Sung Inter-University Semiconductor Research Center, Seoul National University, Seoul, Korea aut NATIONALLICENCE 700 1- Choe Byung Inter-University Semiconductor Research Center, Seoul National University, Seoul, Korea aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/8(1992-08-01), 825-829 0361-5235 21:8<825 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer