caa a22 4500 46909222X CHVBK 20180323133020.0 cr unu---uuuuu 170328e19920801xx s 000 0 eng 10.1007/BF02665516 doi (NATIONALLICENCE)springer-10.1007/BF02665516 Epitaxial growth and electrical conductance of metal(CoSi2)/insulator(CaF2) nanometer-thick layered structures on Si (111) [Elektronische Daten] [Masahiro Watanabe, Shigeki Muratake, Takashi Suemasu, Hiromasa Fujimoto, Shigenori Sakamori, Masahiro Asada, Shigehisa Arai] Epitaxial growth of a metal (CoSi2) /insulator (CaF2) nanometer-thick layered structure on Si(111) was demonstrated and the resistivity of CoSi2 epilayer in this structure was investigated. An epitaxial CoSi2 layer on CaF2 was obtained by the two-step growth technique,i.e. solid phase epitaxy with the epitaxial Si layer grown in the first step and Co deposited in the second step. This technique was shown to be effective to avoid the Co agglomeration on CaF2 layer observed in the co-evaporation of Si and Co. An epitaxial CaF2 layer was formed on CoSi2/CaF2 at low substrate temperature (450°C) with partially ionized and accelerated CaF2 beam, to avoid Co agglomeration in the CoSi2/CaF2 underlayer as well. Obtained results showed a single-crystalline nature in reflection high-energy electron diffraction (RHEED) and transmission electron microscopy (TEM) observations. The resistivity of a few nm-thick CoSi2 epilayers embedded by CaF2 has been investigated. We studied thickness and annealing temperature dependence of resistivity and showed that a minimum resistivity of 30 μΩ cm was obtained in a 2 nm-thick CoSi2 sample annealed at 860°C. TMS, 1992 Metal/insulator heterostructure nationallicence nanometer-thick CoSi2/CaF2 nationallicence partially ionized beam epitaxy nationallicence resistivity of CoSi2 nationallicence in-situ annealing of epilayer nationallicence Watanabe Masahiro Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152, Tokyo, Japan aut Muratake Shigeki Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152, Tokyo, Japan aut Suemasu Takashi Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152, Tokyo, Japan aut Fujimoto Hiromasa Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152, Tokyo, Japan aut Sakamori Shigenori Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152, Tokyo, Japan aut Asada Masahiro Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152, Tokyo, Japan aut Arai Shigehisa Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152, Tokyo, Japan aut Journal of Electronic Materials Springer-Verlag 21/8(1992-08-01), 783-789 0361-5235 21:8<783 1992 21 11664 https://doi.org/10.1007/BF02665516 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665516 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Watanabe Masahiro Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152, Tokyo, Japan aut NATIONALLICENCE 700 1- Muratake Shigeki Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152, Tokyo, Japan aut NATIONALLICENCE 700 1- Suemasu Takashi Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152, Tokyo, Japan aut NATIONALLICENCE 700 1- Fujimoto Hiromasa Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152, Tokyo, Japan aut NATIONALLICENCE 700 1- Sakamori Shigenori Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152, Tokyo, Japan aut NATIONALLICENCE 700 1- Asada Masahiro Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152, Tokyo, Japan aut NATIONALLICENCE 700 1- Arai Shigehisa Department of Electrical and Electronics Engineering, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, 152, Tokyo, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/8(1992-08-01), 783-789 0361-5235 21:8<783 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer