caa a22 4500 469092238 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19920801xx s 000 0 eng 10.1007/BF02665519 doi (NATIONALLICENCE)springer-10.1007/BF02665519 Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO2 [Elektronische Daten] [F. Johnson, Donald Miles, Douglas Grider, J. Wortman] Polycrystalline SiGe etches that are selective to silicon dioxide as well as silicon are needed for flexibility in device fabrication. A solution of NH4OH, H2O2, and H2O has been found to selectivity etch polycrystalline silicon-germanium alloys over both silicon and silicon dioxide. Optimum composition of the solution was determined by maximizing etch rates for SiGe films with several germanium compositions. The dependence of etch rates on germanium content, etching temperature, and doping concentration are reported. The etch rate and selectivity are approximately exponentially proportional to the germanium content. Etching was found to be insensitive to deposition method, doping method, and annealing conditions of the SiGe films. In addition, etching leaves a smooth silicon substrate surface after removal of SiGe films. TMS, 1992 Chemical etching nationallicence polycrystalline SiGe alloys nationallicence NH4OH nationallicence H2O2 nationallicence Johnson F. Department of Electrical and Computer Engineering, North Carolina State University, 27695-7911, Raleigh, North Carolina aut Miles Donald Department of Electrical and Computer Engineering, North Carolina State University, 27695-7911, Raleigh, North Carolina aut Grider Douglas Department of Electrical and Computer Engineering, North Carolina State University, 27695-7911, Raleigh, North Carolina aut Wortman J. Department of Electrical and Computer Engineering, North Carolina State University, 27695-7911, Raleigh, North Carolina aut Journal of Electronic Materials Springer-Verlag 21/8(1992-08-01), 805-810 0361-5235 21:8<805 1992 21 11664 https://doi.org/10.1007/BF02665519 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665519 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Johnson F. Department of Electrical and Computer Engineering, North Carolina State University, 27695-7911, Raleigh, North Carolina aut NATIONALLICENCE 700 1- Miles Donald Department of Electrical and Computer Engineering, North Carolina State University, 27695-7911, Raleigh, North Carolina aut NATIONALLICENCE 700 1- Grider Douglas Department of Electrical and Computer Engineering, North Carolina State University, 27695-7911, Raleigh, North Carolina aut NATIONALLICENCE 700 1- Wortman J. Department of Electrical and Computer Engineering, North Carolina State University, 27695-7911, Raleigh, North Carolina aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/8(1992-08-01), 805-810 0361-5235 21:8<805 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer