caa a22 4500 469092262 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19920801xx s 000 0 eng 10.1007/BF02665521 doi (NATIONALLICENCE)springer-10.1007/BF02665521 Electrical characteristics of diodes fabricated in selective Si/Si1− x Ge x epitaxial layers [Elektronische Daten] [T. Kamins, K. Nauka, R. Jacowitz, J. Hoyt, D. Noble, J. Gibbons] Diodes have been fabricated in layers of Si1−x Ge x and silicon deposited selectively on patterned wafers, and the electrical characteristics of the diodes have been examined. For 50 nm thick Si1−x Ge x layers containing about 22% Ge, the forward characteristics of larger diodes are nearly ideal. However, the reverse leakage current is higher when the edges of the diode intersect the oxide defining the selectively deposited layers than when the diode edges are separated from this oxide. The diode characteristics are more ideal when the diode edges are aligned along the [100] directions than when aligned along the [110] directions. Higher-temperature hydrogen pre-treatments before epitaxial deposition can degrade the diode characteristics. TMS, 1992 Selective epitaxy nationallicence Si1− x Ge x nationallicence heteroepitaxy nationallicence Kamins T. Hewlett-Packard, 94303-0867, Palo Alto, CA aut Nauka K. Hewlett-Packard, 94303-0867, Palo Alto, CA aut Jacowitz R. Hewlett-Packard, 94303-0867, Palo Alto, CA aut Hoyt J. Solid State Laboratory, Stanford University, 94305, Stanford, CA aut Noble D. Solid State Laboratory, Stanford University, 94305, Stanford, CA aut Gibbons J. Solid State Laboratory, Stanford University, 94305, Stanford, CA aut Journal of Electronic Materials Springer-Verlag 21/8(1992-08-01), 817-824 0361-5235 21:8<817 1992 21 11664 https://doi.org/10.1007/BF02665521 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665521 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kamins T. Hewlett-Packard, 94303-0867, Palo Alto, CA aut NATIONALLICENCE 700 1- Nauka K. Hewlett-Packard, 94303-0867, Palo Alto, CA aut NATIONALLICENCE 700 1- Jacowitz R. Hewlett-Packard, 94303-0867, Palo Alto, CA aut NATIONALLICENCE 700 1- Hoyt J. Solid State Laboratory, Stanford University, 94305, Stanford, CA aut NATIONALLICENCE 700 1- Noble D. Solid State Laboratory, Stanford University, 94305, Stanford, CA aut NATIONALLICENCE 700 1- Gibbons J. Solid State Laboratory, Stanford University, 94305, Stanford, CA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/8(1992-08-01), 817-824 0361-5235 21:8<817 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer