caa a22 4500 469092270 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19920801xx s 000 0 eng 10.1007/BF02665517 doi (NATIONALLICENCE)springer-10.1007/BF02665517 ArF excimer laser-enhanced photochemical vapor deposition of epitaxial Si from Si2H6: A simple growth kinetic model [Elektronische Daten] [B. Fowler, S. Lian, S. Krishnan, L. Jung, C. Li, D. Samara, I. Manna, S. Banerjee] Photolysis of Si2H6 using 193 nm radiation from an ArF excimer laser has been used to deposit homoepitaxial Si films in the temperature range of 250 to 350°C. Photolytic decomposition of Si2H6 generates growth precursors which adsorb on to a hydrogenated Si surface. A growth kinetic model is proposed based on single-photon 193 nm absorption by Si2H6, and chemical reaction of the photofragments as they diffuse to the sub-strate surface. With the laser beam positioned parallel to the Si substrate, the deposi-tion yield of solid Si from photo-excited Si2H6 is estimated to be 0.20 ± 0.04. Growth rates vary linearly with laser intensity and Si2H6 partial pressure over a range of 1-15 mJ/cm2 · pulse and 5-40 mTorr, respectively, and epitaxial films are deposited when laser intensity and Si2H6 partial pressure conditions are such that the initial photofragment concentration is less than ~1013 cm−3. TMS, 1992 Si nationallicence Photo-CVD nationallicence growth kinetic model nationallicence Fowler B. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Lian S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Krishnan S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Jung L. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Li C. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Samara D. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Manna I. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Banerjee S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Journal of Electronic Materials Springer-Verlag 21/8(1992-08-01), 791-797 0361-5235 21:8<791 1992 21 11664 https://doi.org/10.1007/BF02665517 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665517 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Fowler B. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Lian S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Krishnan S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Jung L. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Li C. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Samara D. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Manna I. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Banerjee S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/8(1992-08-01), 791-797 0361-5235 21:8<791 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer