caa a22 4500 469092300 CHVBK 20180323133020.0 cr unu---uuuuu 170328e19920501xx s 000 0 eng 10.1007/BF02655622 doi (NATIONALLICENCE)springer-10.1007/BF02655622 In situ B-doped Si epitaxial films grown at 450‡ C by remote plasma-enhanced chemical vapor deposition: Physical and electrical characterization [Elektronische Daten] [J. Irby, D. Kinosky, T. Hsu, R. Qian, A. Mahajan, S. Thomas, B. Anthony, S. Banerjee, A. Tasch, C. Magee] In situ boron doping of Si epitaxial films grown at 450‡ C by remote plasma-enhanced chemical vapor deposition (RPCVD) has been studied using secondary ion mass spectroscopy (SIMS), Hall effect measurements, defect etching in conjunction with Nomarski microscopy, cross-sectional transmission electron microscopy (XTEM), and current-voltage measurements. Boron incorporation is shown to be controllable and electrically active from 7 × 1017 to over 1020 cm-3, with no dependence on process parameters (temperature, rf power, and substrate bias) in the ranges studied, other than the B2H6/SiH4 gas-phase ratio. No change in deposition rate upon introduction of B2H6 dopant gas is seen, contrary to what has been observed in several higher-temperature CVD processes. No defects such as stacking faults are seen under Nomarski microscopy, but a visible haze covers some areas ofin situ B-doped wafers. This haze appears to consist of amorphous cone-shaped structures with their apexes at the substrate-epilayer interface. The origin of the conical defects is believed to be related to some phenomenon at the initiation of growth. In order to evaluate the electrical quality ofin situ B-doped epilayers,P +/N mesa diodes have been fabricated using both homoepitaxial and heteroepitaxial (GexSi1-x)p-type epitaxial films. The electrical junction in these diodes coincides with the (epi-substrate)—interface in the grown films. To avoid interdiffusion or annealing effects during diode fabrication, all processing temperatures were kept at or below 450‡ C. Ideality factors are 1.2-1.3 for all diodes, indicating diffusion-limited transport rather than recombination in the depletion region. TMS, 1992 Si epitaxy nationallicence low-temperature processing nationallicence in situ boron doping nationallicence plasmaenhanced deposition nationallicence Irby J. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Kinosky D. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Hsu T. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Qian R. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Mahajan A. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Thomas S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Anthony B. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Banerjee S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Tasch A. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Magee C. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut Journal of Electronic Materials Springer-Verlag 21/5(1992-05-01), 543-547 0361-5235 21:5<543 1992 21 11664 https://doi.org/10.1007/BF02655622 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655622 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Irby J. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Kinosky D. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Hsu T. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Qian R. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Mahajan A. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Thomas S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Anthony B. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Banerjee S. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Tasch A. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Magee C. Microelectronics Research Center, University of Texas, 78712, Austin, TX aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/5(1992-05-01), 543-547 0361-5235 21:5<543 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer