caa a22 4500 46909236X CHVBK 20180323133021.0 cr unu---uuuuu 170328e19920501xx s 000 0 eng 10.1007/BF02655621 doi (NATIONALLICENCE)springer-10.1007/BF02655621 Deep-level transient spectroscopy of detector-grade high-resistivity float-zone silicon [Elektronische Daten] [E. Simoen, K. De Backker, C. Claeys, P. Clauws] In this paper, the application of standard capacitance DLTS to high-resistivity (HR) silicon is investigated both theoretically and experimentally. As will be demonstrated, typical artefacts occur, which are related to the low doping density of the material (order of a few times 1011 to 1012 cm-3). The high series resistance of a HR-Si diode gives rise to the so-called Q-effect, yielding a reduction of the DLTS peak amplitude, which is particularly pronounced at room temperature and for p-type material. A second effect is the occurrence of non-negligible re-emission during the filling pulse, which causes the Arrhenius plot to deviate from a straight line and is particularly important for repulsive trapping centres. Methods will be discussed to reduce or correct for these phenomena. They will be illustrated by the practical example of the interstitial Fe donor-level in p-type HR-Si. TMS, 1992 Si nationallicence DLTS nationallicence low doping density nationallicence Simoen E. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium aut De Backker K. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium aut Claeys C. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium aut Clauws P. Laboratorium voor Kristallografie en Studie van de Vaste Stof, Krijgslaan 281-S1, B-9000, Gent, Belgium aut Journal of Electronic Materials Springer-Verlag 21/5(1992-05-01), 533-541 0361-5235 21:5<533 1992 21 11664 https://doi.org/10.1007/BF02655621 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655621 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Simoen E. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium aut NATIONALLICENCE 700 1- De Backker K. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium aut NATIONALLICENCE 700 1- Claeys C. IMEC, Kapeldreef 75, B-3001, Leuven, Belgium aut NATIONALLICENCE 700 1- Clauws P. Laboratorium voor Kristallografie en Studie van de Vaste Stof, Krijgslaan 281-S1, B-9000, Gent, Belgium aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/5(1992-05-01), 533-541 0361-5235 21:5<533 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer