caa a22 4500 469092386 CHVBK 20180323133021.0 cr unu---uuuuu 170328e19920501xx s 000 0 eng 10.1007/BF02655614 doi (NATIONALLICENCE)springer-10.1007/BF02655614 Si-YBaCuO intermixing and reactive patterning technique [Elektronische Daten] [Q. Ma, E. Yang, R. Laibowitz, Chin-An Chang] A novel Si-YBaCuO intermixing technique has been developed for patterning YBaCuO superconducting thin films on both insulating oxide substrates (MgO) and semiconductor substrates (Si). The electrical, structural, and interfacial properties of the Si-YBaCuO intermixed system have been studied using resistivity, x-ray diffraction, scanning electron microscopy, x-ray photoelectron spectroscopy and Auger depth profiling measurements. The study showed that the reaction of Si with YBaCuO and formation of silicon oxides during a high temperature process destroyed superconductivity of the film and created an insulating film. On a MgO substrate, the patterning process was carried out by first patterning a silicon layer using photolithography or laser-direct-writing, followed by the deposition of YBaCuO film and annealing. For a silicon substrate, thin metal layers of Ag and Au were patterned as a buffer mask which defines the YBaCuO structures fabricated thereafter. Micron-sized (2-10 Μm) superconducting structures with zero resistance temperature above 77 K have been demonstrated. This technique has been used to fabricate current controlled HTS switches and interconnects. TMS, 1992 YBCO films nationallicence annealing nationallicence reactive patterning nationallicence Ma Q. Microelectronics Sciences Labs and Department of Electrical Engineering, Columbia University, 10027, New York, NY aut Yang E. Microelectronics Sciences Labs and Department of Electrical Engineering, Columbia University, 10027, New York, NY aut Laibowitz R. IBM T. J. Watson Research Center, 10598, Yorktown Heights, NY aut Chang Chin-An IBM T. J. Watson Research Center, 10598, Yorktown Heights, NY aut Journal of Electronic Materials Springer-Verlag 21/5(1992-05-01), 487-494 0361-5235 21:5<487 1992 21 11664 https://doi.org/10.1007/BF02655614 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655614 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ma Q. Microelectronics Sciences Labs and Department of Electrical Engineering, Columbia University, 10027, New York, NY aut NATIONALLICENCE 700 1- Yang E. Microelectronics Sciences Labs and Department of Electrical Engineering, Columbia University, 10027, New York, NY aut NATIONALLICENCE 700 1- Laibowitz R. IBM T. J. Watson Research Center, 10598, Yorktown Heights, NY aut NATIONALLICENCE 700 1- Chang Chin-An IBM T. J. Watson Research Center, 10598, Yorktown Heights, NY aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/5(1992-05-01), 487-494 0361-5235 21:5<487 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer