caa a22 4500 469092440 CHVBK 20180323133021.0 cr unu---uuuuu 170328e19920201xx s 000 0 eng 10.1007/BF02655833 doi (NATIONALLICENCE)springer-10.1007/BF02655833 Effects of S, Si, or Fe dopants on the diffusion of Zn in InP during MOCVD [Elektronische Daten] [C. Blaauw, B. Emmerstorfer, D. Kreller, L. Hobbs, A. Springthorpe] Diffusion of Zn in InP during growth of InP epitaxial layers has been investigated in layer structures consisting of Zn-InP epilayers grown on S-InP and Fe-InP substrates, and on undoped InP epilayers. The layers were grown by metalorganic chemical vapour deposition (MOCVD) atT = 625° C andP = 75 Torr. Dopant diffusion profiles were measured by secondary ion mass spectrometry (SIMS). At sufficiently high Zn doping levels ([Zn] ≥8 × 1017 cm−3) diffusion into S-InP substrates took place, with accumulation of Zn in the substrate at a concentration similar to [S]. Diffusion into undoped InP epilayers produced a diffusion tail at low [Zn] levels, probably associated with interstitial Zn diffusion. For diffusion into Fe-InP, this low level diffusion produced a region of constant Zn concentration at [Zn] ≈ 3 × 1016 cm−3, due to kick-out of the original Fe species from substitutional sites. We also investigated diffusion out of (Zn, Si) codoped InP epilayers grown on Fe-InP substates. The SIMS profiles were characterised by a sharp decrease in [Zn] at the epilayer-substrate interface; the magnitude of this decrease corresponded to that of the Si donor level in the epilayer. For [Si] ≫ [Zn] in the epilayer no Zn diffusion was observed; Hall measurements indicated that the donor and acceptor species in those samples were electrically active. All these results are consistent with the presence of donor-acceptor interactions in InP, resulting in the formation of ionised donor-acceptor pairs which are immobile, and do not contribute to the diffusion process. The Mineral, Metal & Materials Society,Inc., 1992 InP nationallicence MOCVD nationallicence dopant diffusion nationallicence dopant incorporation nationallicence Blaauw C. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut Emmerstorfer B. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut Kreller D. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut Hobbs L. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut Springthorpe A. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 173-179 0361-5235 21:2<173 1992 21 11664 https://doi.org/10.1007/BF02655833 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655833 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Blaauw C. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut NATIONALLICENCE 700 1- Emmerstorfer B. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut NATIONALLICENCE 700 1- Kreller D. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut NATIONALLICENCE 700 1- Hobbs L. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut NATIONALLICENCE 700 1- Springthorpe A. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 173-179 0361-5235 21:2<173 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer