caa a22 4500 469092459 CHVBK 20180323133021.0 cr unu---uuuuu 170328e19920201xx s 000 0 eng 10.1007/BF02655836 doi (NATIONALLICENCE)springer-10.1007/BF02655836 GaInP and AlInP grown by elemental source molecular beam epitaxy [Elektronische Daten] [J. Varriano, M. Koch, F. Johnson, G. Wicks] We report on the use of a new, valved, solid phosphorus cracker source for the growth of phosphides by molecular beam epitaxy. The source avoids the relatively high expense and high level of toxicity associated with the use of phosphine gas and eliminates the problems commonly encountered in using conventional solid phosphorus sources. The source has been used to grow GaInP and AlInP lattice-matched to GaAs substrates. The quality of the materials reported here is comparable to the best materials grown by other techniques. Photoluminescence and Raman scattering measurements indicate that the resulting material has a high degree of disorder on the group III sublattice. The new source is shown to be a reliable and attractive alternative for the growth of these phosphide materials. The Mineral, Metal & Materials Society,Inc., 1992 Molecular beam epitaxy nationallicence GaInP nationallicence AlInP nationallicence Varriano J. The Institute of Optics, University of Rochester, 14627, Rochester, New York aut Koch M. The Institute of Optics, University of Rochester, 14627, Rochester, New York aut Johnson F. The Institute of Optics, University of Rochester, 14627, Rochester, New York aut Wicks G. The Institute of Optics, University of Rochester, 14627, Rochester, New York aut Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 195-198 0361-5235 21:2<195 1992 21 11664 https://doi.org/10.1007/BF02655836 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655836 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Varriano J. The Institute of Optics, University of Rochester, 14627, Rochester, New York aut NATIONALLICENCE 700 1- Koch M. The Institute of Optics, University of Rochester, 14627, Rochester, New York aut NATIONALLICENCE 700 1- Johnson F. The Institute of Optics, University of Rochester, 14627, Rochester, New York aut NATIONALLICENCE 700 1- Wicks G. The Institute of Optics, University of Rochester, 14627, Rochester, New York aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 195-198 0361-5235 21:2<195 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer