caa a22 4500 469092467 CHVBK 20180323133021.0 cr unu---uuuuu 170328e19920201xx s 000 0 eng 10.1007/BF02655841 doi (NATIONALLICENCE)springer-10.1007/BF02655841 Effect of grain microstructure on P diffusion in polycrystalline-on-single crystal silicon systems [Elektronische Daten] [S. Batra, K. Park, S. Banerjee, G. Lux, C. Kirschbaum, J. Norberg, T. Smith, J. Elliott, B. Mulvaney] Grain microstructure has a major impact on diffusion of P in polysilicon-on-single crystal silicon systems both within the polysilicon layer and inside the single crystal silicon substrate. During annealing, P diffuses very rapidly along grain boundaries in the polysilicon layer to the interface, where it undergoes very fast diffusion laterally along the polysilicon-single crystal silicon interface, followed subsequently by slow indiffusion into the underlying substrate. However, the extrapolated Secondary Ion Mass Spectrometry profiles for P reveal a discontinuity at the interface, which is caused by anomalous diffusion behavior similar to the well known "kink” effect observed in single crystal silicon during P diffusion. The high diffusivity tail region is also much less pronounced for polysilicon-on-silicon systems compared to single crystal silicon due to a reduction of interstitial supersaturation in the substrate. This reduction is believed to result from the absorption of interstitials by the grain boundaries which act as sinks for the excess interstitials. The Mineral, Metal & Materials Society,Inc., 1992 Polysilicon nationallicence diffusion and shallow junctions nationallicence Batra S. The University of Texas, 78712, Austin, TX aut Park K. The University of Texas, 78712, Austin, TX aut Banerjee S. The University of Texas, 78712, Austin, TX aut Lux G. Charles Evans & Associates, 94063, Redwood City, CA aut Kirschbaum C. Charles Evans & Associates, 94063, Redwood City, CA aut Norberg J. Charles Evans & Associates, 94063, Redwood City, CA aut Smith T. Motorola Inc., 85202, Phoenix, AZ aut Elliott J. SEMATECH, 78741, Austin, TX aut Mulvaney B. MCC, 78759, Austin, TX aut Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 227-231 0361-5235 21:2<227 1992 21 11664 https://doi.org/10.1007/BF02655841 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655841 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Batra S. The University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Park K. The University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Banerjee S. The University of Texas, 78712, Austin, TX aut NATIONALLICENCE 700 1- Lux G. Charles Evans & Associates, 94063, Redwood City, CA aut NATIONALLICENCE 700 1- Kirschbaum C. Charles Evans & Associates, 94063, Redwood City, CA aut NATIONALLICENCE 700 1- Norberg J. Charles Evans & Associates, 94063, Redwood City, CA aut NATIONALLICENCE 700 1- Smith T. Motorola Inc., 85202, Phoenix, AZ aut NATIONALLICENCE 700 1- Elliott J. SEMATECH, 78741, Austin, TX aut NATIONALLICENCE 700 1- Mulvaney B. MCC, 78759, Austin, TX aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 227-231 0361-5235 21:2<227 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer