caa a22 4500 469092475 CHVBK 20180323133021.0 cr unu---uuuuu 170328e19920201xx s 000 0 eng 10.1007/BF02655831 doi (NATIONALLICENCE)springer-10.1007/BF02655831 Wide-gap semiconductor InGaN and InGaAln grown by MOVPE [Elektronische Daten] [T. Matsuoka, N. Yoshimoto, T. Sasaki, A. Katsui] We have achieved InGaN growth on sapphire substrates at temperatures substantially higher than conventional growth temperatures for InGaN. When the growth temperature was changed from 500 (conventional) to 800° C (this work) in InGaN, the x-ray diffraction line width (full width at half maximum) decreased from 100 to 30 min. At 77 K, edge emission was observed in PL. In order to further improve crystalline quality, we have investigated ZnO as a lattice-matching substrate. First, the surface treatment and the resistance to the reducing atmosphere at high temperatures was briefly investigated. We report the first successful lattice-matched growth of InGaN. The x-ray diffraction line width of InGaN grown on ZnO was about 20% smaller than that of films grown on sapphire substrates, thus using lattice-matched substrates was shown to have an effect on improving the crystalline quality of InGaN. Single crystal InGaAlN has been also realized on sapphire substrates. The indium, gallium and aluminum contents were 2.2, 22.5 and 74.3%, respectively. The optical transmission characteristic of this InGaAlN was measured. The Mineral, Metal & Materials Society,Inc., 1992 MOVPE nationallicence InGaN nationallicence InGaAlN nationallicence Matsuoka T. NTT Opto-Electronics Laboratories, Tokai, 319-11, Ibaraki, Japan aut Yoshimoto N. NTT Opto-Electronics Laboratories, Tokai, 319-11, Ibaraki, Japan aut Sasaki T. NTT Opto-Electronics Laboratories, Tokai, 319-11, Ibaraki, Japan aut Katsui A. NTT Opto-Electronics Laboratories, Tokai, 319-11, Ibaraki, Japan aut Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 157-163 0361-5235 21:2<157 1992 21 11664 https://doi.org/10.1007/BF02655831 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655831 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Matsuoka T. NTT Opto-Electronics Laboratories, Tokai, 319-11, Ibaraki, Japan aut NATIONALLICENCE 700 1- Yoshimoto N. NTT Opto-Electronics Laboratories, Tokai, 319-11, Ibaraki, Japan aut NATIONALLICENCE 700 1- Sasaki T. NTT Opto-Electronics Laboratories, Tokai, 319-11, Ibaraki, Japan aut NATIONALLICENCE 700 1- Katsui A. NTT Opto-Electronics Laboratories, Tokai, 319-11, Ibaraki, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 157-163 0361-5235 21:2<157 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer