caa a22 4500 469092483 CHVBK 20180323133021.0 cr unu---uuuuu 170328e19920201xx s 000 0 eng 10.1007/BF02655828 doi (NATIONALLICENCE)springer-10.1007/BF02655828 Growth of GaAs1−xPx/GaAs and InAsxP1−x/InP strained quantum wells for optoelectronic devices by gas-source molecular beam epitaxy [Elektronische Daten] [H. Hou, C. Tu] In this paper we show that pseudomorphically strained heterostructures of InAs x P1−x /InP may be an alternative to lattice-matched heterostructures of In1−x Ga x As y P1−y /InP for optoelectronic applications. We first studied the group-V composition control in the gas-source molecular beam epitaxy (GSMBE) of the GaAs1-x P x /GaAs system. Then we studied GSMBE of strained InAs x P1−x /InP multiple quantum wells with the ternary well layer in the composition range 0.15 <x < 0.75. Structural and optical properties were characterized by high-resolution x-ray rocking curves, transmission electron microscopy, absorption and low-temperature photoluminescence measurements. High-quality multiple-quantum-well structures were obtained even for highly strained (up to 2.5%) samples. The achievement of sharp excitonic absorptions at 1.06, 1.3 and 1.55μm at room temperature from InAs x P1−x /InP quantum wells suggests the possibility of long-wavelength optoelectronic applications. The Mineral, Metal & Materials Society,Inc., 1992 Gas-source molecular beam epitaxy nationallicence strained quantum wells nationallicence GaAs1− x P x /GaAs nationallicence InAs x P1− x /InP nationallicence Hou H. Department of Electrical and Computer Engineering, University of California at San Diego, 92093-0407, La Jolla, CA aut Tu C. Department of Electrical and Computer Engineering, University of California at San Diego, 92093-0407, La Jolla, CA aut Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 137-141 0361-5235 21:2<137 1992 21 11664 https://doi.org/10.1007/BF02655828 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655828 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Hou H. Department of Electrical and Computer Engineering, University of California at San Diego, 92093-0407, La Jolla, CA aut NATIONALLICENCE 700 1- Tu C. Department of Electrical and Computer Engineering, University of California at San Diego, 92093-0407, La Jolla, CA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 137-141 0361-5235 21:2<137 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer