caa a22 4500 469092491 CHVBK 20180323133021.0 cr unu---uuuuu 170328e19920201xx s 000 0 eng 10.1007/BF02655844 doi (NATIONALLICENCE)springer-10.1007/BF02655844 Ohmic contacts to n -type In0.5Ga0.5P [Elektronische Daten] [F. Ren, J. Kuo, S. Pearton, T. Fullowan, J. Lothian] The contact properties of alloyed Ni/Au-Ge/Mo/Au metallization to npoststagger+In0.5Ga0.5P epilayers grown by gas-source molecular beam epitaxy on GaAs substrates are reported. A minimum specific contact resistance of 10−5 Ωcm2 was obtained forn = 2 × 1019 cm−3 material after alloying at 360° C for 20 sec. Above this temperature outdiffusion of lattice elements and reactions of the metallization with the In0.5Ga0.5P lead to severe morphological changes and degraded contact properties. From the temperature dependence of the contact resistance, thermionic emission was identified as the predominant current transport mechanism in these contacts. The Mineral, Metal & Materials Society,Inc., 1992 InGaP nationallicence contacts nationallicence gas-source MBE nationallicence Ren F. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut Kuo J. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut Pearton S. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut Fullowan T. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut Lothian J. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 243-247 0361-5235 21:2<243 1992 21 11664 https://doi.org/10.1007/BF02655844 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655844 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ren F. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut NATIONALLICENCE 700 1- Kuo J. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut NATIONALLICENCE 700 1- Pearton S. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut NATIONALLICENCE 700 1- Fullowan T. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut NATIONALLICENCE 700 1- Lothian J. AT&T Bell Laboratories, 07974, Murray Hill, New Jersey aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 243-247 0361-5235 21:2<243 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer