caa a22 4500 469092505 CHVBK 20180323133021.0 cr unu---uuuuu 170328e19920201xx s 000 0 eng 10.1007/BF02655829 doi (NATIONALLICENCE)springer-10.1007/BF02655829 Ultra-low temperature OMVPE of InAs and InAsBi [Elektronische Daten] [K. Ma, Z. Fang, R. Cohen, G. Stringfellow] InAs and InAsBi have been grown by atmospheric pressure organometallic vapor phase epitaxy (OMVPE) over a broad temperature range from 600 to as low as 275° C. This is the lowest growth temperature ever reported for conventional OMVPE. It is demonstrated that lowering the growth temperature is the most effective approach for increasing the maximum Bi content in InAsBi alloys where the Bi solubility limit is 0.025 at.%. For example, InAsBi samples with Bi concentrations as high as 6.1 at.% have been successfully grown at a temperature of 275° C. Trimethylindium, arsine, and trimethylbismuth were used as precursors for most experiments. The growth efficiency is a constant for temperatures above 400° C, indicating that the growth rate is diffusion limited. For lower temperatures, it decreases exponentially with decreasing temperature with an activation energy of 24 kcal/mol. Incomplete pyrolysis of TMIn limits the growth rate in this temperature regime. By substituting ethyldimethylindium for TMIn the growth rate can be increased at lower temperatures. Hall effect measurements show that then-type background concentration increases from approximately 2.3 × 1016 to 1019 cm−3 as the growth temperature decreases from 600 to 325° C. Secondary ion mass spectroscopy results show that the dominant impurity is carbon. Thus, carbon is mainly a donor in these materials. The integrated photoluminescence intensity drops rapidly with decreasing growth temperature. The Mineral, Metal & Materials Society,Inc., 1992 OMVPE nationallicence InAs nationallicence InAsBi nationallicence Ma K. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut Fang Z. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut Cohen R. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut Stringfellow G. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 143-148 0361-5235 21:2<143 1992 21 11664 https://doi.org/10.1007/BF02655829 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655829 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Ma K. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut NATIONALLICENCE 700 1- Fang Z. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut NATIONALLICENCE 700 1- Cohen R. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut NATIONALLICENCE 700 1- Stringfellow G. Department of Materials Science and Engineering, University of Utah, 84112, Salt Lake City, UT aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 143-148 0361-5235 21:2<143 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer