caa a22 4500 469092548 CHVBK 20180323133021.0 cr unu---uuuuu 170328e19920201xx s 000 0 eng 10.1007/BF02655842 doi (NATIONALLICENCE)springer-10.1007/BF02655842 Investigations on the interface abruptness in CBE-grown InGaAs/InP QW structures [Elektronische Daten] [A. Antolini, P. Bradley, C. Cacciatore, D. Campi, L. Gastaldi, F. Genova, M. Iori, C. Lamberti, C. Papuzza, C. Rigo] In this work we present a detailed analysis of chemical beam epitaxy-grown (CBE) InGaAs/InP multi quantum well (MQW) interfaces to explain experimental data from high quality single and multi-QWs. Our results compare well with the best published data we have obtained some outstanding results. For example, the very intense absorption peak and the high number of satellite peaks in the diffraction rocking curve, were obtained even on samples grown in non-optimized conditions. A careful use of growth interruption at the interfaces allows us to obtain monolayer (ml) interfaces. Nevertheless, the switching of the group V element at each interface leads to strain formation. This effect could become dramatic in superlattice structures with periods smaller than about 5 nm and barriers of less than 3-4 nm. More generally, the conditions for the growth of high quality single and multiple QWs is discussed in this work and these will be correlated with fourier transform photoluminesence (FTPL), high resolution x-ray diffraction (HRXRD), absorption, photo-absorption and photo-current (in PIN structures) measurements. The Mineral, Metal & Materials Society,Inc., 1992 InGaAs/InP nationallicence chemical beam epitaxy nationallicence multiple QW nationallicence Antolini A. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut Bradley P. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut Cacciatore C. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut Campi D. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut Gastaldi L. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut Genova F. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut Iori M. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut Lamberti C. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut Papuzza C. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut Rigo C. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 233-238 0361-5235 21:2<233 1992 21 11664 https://doi.org/10.1007/BF02655842 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655842 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Antolini A. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut NATIONALLICENCE 700 1- Bradley P. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut NATIONALLICENCE 700 1- Cacciatore C. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut NATIONALLICENCE 700 1- Campi D. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut NATIONALLICENCE 700 1- Gastaldi L. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut NATIONALLICENCE 700 1- Genova F. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut NATIONALLICENCE 700 1- Iori M. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut NATIONALLICENCE 700 1- Lamberti C. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut NATIONALLICENCE 700 1- Papuzza C. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut NATIONALLICENCE 700 1- Rigo C. GSELT Centro Studi E. Laboratori Telecomunicazioni, Via G. Reiss Romoli 274, 10148, Torino, Italy (I) aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 233-238 0361-5235 21:2<233 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer