caa a22 4500 469092556 CHVBK 20180323133021.0 cr unu---uuuuu 170328e19920201xx s 000 0 eng 10.1007/BF02655834 doi (NATIONALLICENCE)springer-10.1007/BF02655834 MBE growth and characteristics of periodic index separate confinement heterostructure InGaAs quantum-well lasers [Elektronische Daten] [M. Hong, M. Wu, Y. Chen, J. Mannaerts, M. Chin] We have used solid-source molecular beam epitaxy (MBE) to grow InGaAs quantum-well lasers emitting at 980nm in a novel configuration of periodic index separate confinement heterostructure (PINSCH). Periodic multilayers (GaAs/AlGaAs) are utilized as optical confinement layers to reduce the transverse beam divergence as well as to increase the maximum output power. The multilayers are grown by temperature modulation MBE without any shutter operation. The heterointerfaces in the multilayers are linearly graded such that the energy barrier heights are greatly decreased. This has led to a drastic reduction in the series resistance which is essential in the performance of high output power. The 5μm × 750μm device has far-field angles of 10° by 20°, a threshold current of 45 mA, an external differential quantum efficiency of 1.15 mW/mA (90%), and an output power of 620 mW, all measured at room temperature under CW operation. A record high fiber coupling efficiency of 51% has been achieved and more than 130 mW of power is coupled into a 5μm-core single mode fiber. The Mineral, Metal & Materials Society,Inc., 1992 Molecular beam epitaxy nationallicence PINSCH lasers nationallicence InGaAs quantum wells nationallicence Hong M. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut Wu M. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut Chen Y. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut Mannaerts J. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut Chin M. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 181-185 0361-5235 21:2<181 1992 21 11664 https://doi.org/10.1007/BF02655834 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655834 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Hong M. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut NATIONALLICENCE 700 1- Wu M. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut NATIONALLICENCE 700 1- Chen Y. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut NATIONALLICENCE 700 1- Mannaerts J. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut NATIONALLICENCE 700 1- Chin M. AT&T Bell Laboratories, 07974, Murray Hill, NJ aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 181-185 0361-5235 21:2<181 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer