caa a22 4500 469092572 CHVBK 20180323133021.0 cr unu---uuuuu 170328e19920201xx s 000 0 eng 10.1007/BF02655832 doi (NATIONALLICENCE)springer-10.1007/BF02655832 Low pressure MOCVD growth of buried heterostructure laser wafers using high quality semi-insulating InP [Elektronische Daten] [D. Knight, B. Emmerstorfer, G. Pakulski, C. Larocque, A. Springthorpe] Semi-insulating Fe doped InP has been grown by low pressure MOCVD at 100 mbar and 630° C. Complete activation of Fe below the solubility limit of 5 × 1016 cm-3 has been achieved by reducing the PH3 concentration during crystal growth to the lowest value required to maintain good surface morphology of the layer. Diffusion of the Fe dopant and dopant spikes at the interface between the substrate and grown layer can be minimized by ensuring that the total Fe concentration in the layer does not exceed the diffusion threshold of 2 × 1017 cm−3. Growth of Fe doped InP around a double heterostructure mesa formed by reactive ion etching produces a structure without either growth of InP on the mesa or notches at the mesa sidewalls, even with minimal overhang of the dielectric mask. Examination of regrown heterostructures shows no evidence of interdiffusion of Fe and Zn, indicating that Fe diffusion has been successfully prevented. Completed lasers have threshold current densities of 2.5 kA/cm2 at 20° C and initial aging results which indicate that these devices have good lasing characteristics and potentially high reliability. The Mineral, Metal & Materials Society,Inc., 1992 Semi-insulating InP nationallicence buried heterostructure laser nationallicence Fe doping nationallicence MOCVD nationallicence Knight D. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut Emmerstorfer B. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut Pakulski G. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut Larocque C. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut Springthorpe A. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 165-171 0361-5235 21:2<165 1992 21 11664 https://doi.org/10.1007/BF02655832 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655832 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Knight D. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut NATIONALLICENCE 700 1- Emmerstorfer B. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut NATIONALLICENCE 700 1- Pakulski G. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut NATIONALLICENCE 700 1- Larocque C. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut NATIONALLICENCE 700 1- Springthorpe A. Bell-Northern Research, Station C, P.O. Box 3511, K1Y 4H7, Ottawa, Ontario, Canada aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 165-171 0361-5235 21:2<165 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer