caa a22 4500 469092599 CHVBK 20180323133021.0 cr unu---uuuuu 170328e19920201xx s 000 0 eng 10.1007/BF02655840 doi (NATIONALLICENCE)springer-10.1007/BF02655840 Thermal stability of Si/Gen/Si heterostructures by photoreflectance [Elektronische Daten] [Kumiko Asami, Kazushi Miki, Kunihiro Sakamoto, Tsunenori Sakamoto, Shun-Ichi Gonda] The thermal stability of Si/Gen/Si(001) heterostructures includingn = 1, 6, 20, and 100 monolayers (ML's) is studied in connection with their electronic structures through the measurement of photoreflectance (PR). The PR spectra are observed at 90 K over the energy range 0.85-4.0 eV. Comparing the PR signals of Si/Ge n /Si(001) heterostructures before and after thermal annealing at 600° C, it is found that the samples with less than 6 ML Ge show no change whereas those with more than 20 ML Ge show large changes. The result suggests that Si/Ge n /Si heterostructures with Ge layer thickness less than 6 ML's are thermally stable. For the heterostructures with 20 and 100 ML Ge, the relaxation of strain in the Ge layer is found to occur from the PR spectra ofE 0(Ge),E 1(Ge) andE 1 +Δ 1(Ge), andE 1(Si). The Mineral, Metal & Materials Society,Inc., 1992 Si/Ge/Si heterostructure nationallicence thermal stability nationallicence thermal annealing nationallicence photoreflectance nationallicence phase-locked epitaxy nationallicence Asami Kumiko The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, 567, Osaka, Japan aut Miki Kazushi The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, 567, Osaka, Japan aut Sakamoto Kunihiro The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, 567, Osaka, Japan aut Sakamoto Tsunenori The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, 567, Osaka, Japan aut Gonda Shun-Ichi The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, 567, Osaka, Japan aut Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 223-226 0361-5235 21:2<223 1992 21 11664 https://doi.org/10.1007/BF02655840 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655840 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Asami Kumiko The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, 567, Osaka, Japan aut NATIONALLICENCE 700 1- Miki Kazushi The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, 567, Osaka, Japan aut NATIONALLICENCE 700 1- Sakamoto Kunihiro The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, 567, Osaka, Japan aut NATIONALLICENCE 700 1- Sakamoto Tsunenori The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, 567, Osaka, Japan aut NATIONALLICENCE 700 1- Gonda Shun-Ichi The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, 567, Osaka, Japan aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 223-226 0361-5235 21:2<223 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer