caa a22 4500 469092602 CHVBK 20180323133021.0 cr unu---uuuuu 170328e19920201xx s 000 0 eng 10.1007/BF02655835 doi (NATIONALLICENCE)springer-10.1007/BF02655835 Be doped GaAs grown by migration enhanced epitaxy at low substrate temperature [Elektronische Daten] [K. Zhang, S. Bose, D. Miller, N. Pan] Conductive Be doped GaAs grown by molecular beam epitaxy at low substrate temperatures (300° C) was obtained for the first time by using migration enhanced epitaxy (MEE) without subsequent annealing. The layers were characterized using Hall effect, double crystal x-ray diffraction, and photoluminescence. With low arsenic exposure, the low temperature MEE layers doped with Be had the same carrier density and similar luminescent efficiency as layers grown by conventional MBE at 580° C. Mobility at 77 K was reduced somewhat for layers doped at 2 × 1017cm−3, which also exhibited hopping conductivity below 40 K. Double crystal x-ray diffraction showed that low temperature MEE samples grown at low As exposure had the narrow linewidth associated with conventional MBE material grown at 580° C, unlike layers grown by conventional MBE at low temperatures, which exhibit an expansion in lattice parameter. The Mineral, Metal & Materials Society,Inc., 1992 Migration enhanced epitaxy nationallicence Be-doped GaAs nationallicence Zhang K. Center for Electronic Materials and Processing, Department of Electrical and Computer Engineering, Pennsylvania State University, 16802, University Park, PA aut Bose S. Center for Electronic Materials and Processing, Department of Electrical and Computer Engineering, Pennsylvania State University, 16802, University Park, PA aut Miller D. Center for Electronic Materials and Processing, Department of Electrical and Computer Engineering, Pennsylvania State University, 16802, University Park, PA aut Pan N. Research Division, Raytheon Company, 02173, Lexington, MA aut Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 187-193 0361-5235 21:2<187 1992 21 11664 https://doi.org/10.1007/BF02655835 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02655835 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Zhang K. Center for Electronic Materials and Processing, Department of Electrical and Computer Engineering, Pennsylvania State University, 16802, University Park, PA aut NATIONALLICENCE 700 1- Bose S. Center for Electronic Materials and Processing, Department of Electrical and Computer Engineering, Pennsylvania State University, 16802, University Park, PA aut NATIONALLICENCE 700 1- Miller D. Center for Electronic Materials and Processing, Department of Electrical and Computer Engineering, Pennsylvania State University, 16802, University Park, PA aut NATIONALLICENCE 700 1- Pan N. Research Division, Raytheon Company, 02173, Lexington, MA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/2(1992-02-01), 187-193 0361-5235 21:2<187 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer