caa a22 4500 469092629 CHVBK 20180323133021.0 cr unu---uuuuu 170328e19921101xx s 000 0 eng 10.1007/BF02665880 doi (NATIONALLICENCE)springer-10.1007/BF02665880 A digital signal-processing analysis technique for the infrared reflectivity characterization of ion implanted silicon [Elektronische Daten] [Gustavo Aizenberg, Pieter Swart, Beatrys Lacquet] A new method for the characterization of ion-implanted silicon is proposed. It is based on analysis of the Fourier spectrum of bilinearly transformed infrared reflectance versus wavenumber data of ion-implanted samples. This non-destructive technique has been applied to previously published infrared reflectance data of 〈111〉 and 〈100〉 oriented Si samples which had been implanted with 2.7 MeV phosphorus and 380 keV silicon ions, respectively, and annealed at 500° C for various lengths of time. The refractive index and thickness of the amorphous layer of the as-implanted samples can be measured directly by means of this technique. The position of boundaries between the amorphous, recrystallized and substrate zones, as well as the position of the carrier concentration peak can be determined for the various annealing times. Depending on the annealing time, the recrystallized layer in 〈111〉 silicon has a refractive index which is between 2% and 4% higher than the substrate refractive index, while the difference in refractive index between the amorphous and recrystallized layers is in the order of 5%. In contrast to these results, the presence of the substrate/recrystallized material interface could not be detected in partially recrystallized 〈100〉 silicon by this method, implying that the refractive index step at the substrate/recrystallized material interface is less than 1%. The step in refractive index at the crystalline/amorphous interface in 〈100〉 silicon implanted with a dose of 0.5 x 1016 cm−2 silicon ions, was measured to be 12%, and it is reduced to 8% after partial regrowth has occurred. These results confirm the data obtained by a model-based least-squares analysis. TMS, 1992 Ion implantation nationallicence Optical reflectometry nationallicence Infrared reflectance nationallicence Thickness estimation nationallicence Refractive index nationallicence Radiation damage nationallicence Annealing nationallicence Si nationallicence Aizenberg Gustavo Sensors Sources and Signal Processing Research Group, Materials Laboratory, Faculty of Engineering, Rand Afrikaans University, 2006, Auckland Park, South Africa aut Swart Pieter Sensors Sources and Signal Processing Research Group, Materials Laboratory, Faculty of Engineering, Rand Afrikaans University, 2006, Auckland Park, South Africa aut Lacquet Beatrys Sensors Sources and Signal Processing Research Group, Materials Laboratory, Faculty of Engineering, Rand Afrikaans University, 2006, Auckland Park, South Africa aut Journal of Electronic Materials Springer-Verlag 21/11(1992-11-01), 1033-1040 0361-5235 21:11<1033 1992 21 11664 https://doi.org/10.1007/BF02665880 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665880 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Aizenberg Gustavo Sensors Sources and Signal Processing Research Group, Materials Laboratory, Faculty of Engineering, Rand Afrikaans University, 2006, Auckland Park, South Africa aut NATIONALLICENCE 700 1- Swart Pieter Sensors Sources and Signal Processing Research Group, Materials Laboratory, Faculty of Engineering, Rand Afrikaans University, 2006, Auckland Park, South Africa aut NATIONALLICENCE 700 1- Lacquet Beatrys Sensors Sources and Signal Processing Research Group, Materials Laboratory, Faculty of Engineering, Rand Afrikaans University, 2006, Auckland Park, South Africa aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/11(1992-11-01), 1033-1040 0361-5235 21:11<1033 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer