caa a22 4500 46909267X CHVBK 20180323133022.0 cr unu---uuuuu 170328e19921101xx s 000 0 eng 10.1007/BF02665883 doi (NATIONALLICENCE)springer-10.1007/BF02665883 Reduction of deep levels in MOCVD-regrown AlxGa1−x as interfaces by (NH4)2S passivation and in-situ HCl etching [Elektronische Daten] [G. Guel, E. Armour, S. Sun, S. Srinivasan, K. Malloy, S. Hersee] The effects of surface preparation usinginsitu HCl etching and (NH4)2S passivation of AlxGa1-xAs episurfaces prior to regrowth by MOCVD are analyzed by deep level transient spectroscopy (DLTS), electrochemical profiling (C-V) and room-temperature photoluminescence (PL). Four electron traps were found from the DLTS measurements; a DX-center and three traps previously reported for oxygen-contaminated MOCVD systems. Electrical and optical measurements on quantum well lasers containing a regrown interface in the optical confinement region are also presented. It is demonstrated that both (NH4)2S passivation and HClin-situ etching improve the electrical and optical quality of the regrown AlxGa1-xAs interfaces, with the best results being obtained when the two methods are used in tandem. TMS, 1992 AlxGa1-xAs regrowth nationallicence (NH4)2S passivation nationallicence Deep levels nationallicence Lasers nationallicence Guel G. Center for High Technology Materials, University of New Mexico, 87131-6081, Albuquerque, NM aut Armour E. Center for High Technology Materials, University of New Mexico, 87131-6081, Albuquerque, NM aut Sun S. Center for High Technology Materials, University of New Mexico, 87131-6081, Albuquerque, NM aut Srinivasan S. Center for High Technology Materials, University of New Mexico, 87131-6081, Albuquerque, NM aut Malloy K. Center for High Technology Materials, University of New Mexico, 87131-6081, Albuquerque, NM aut Hersee S. Center for High Technology Materials, University of New Mexico, 87131-6081, Albuquerque, NM aut Journal of Electronic Materials Springer-Verlag 21/11(1992-11-01), 1051-1056 0361-5235 21:11<1051 1992 21 11664 https://doi.org/10.1007/BF02665883 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665883 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Guel G. Center for High Technology Materials, University of New Mexico, 87131-6081, Albuquerque, NM aut NATIONALLICENCE 700 1- Armour E. Center for High Technology Materials, University of New Mexico, 87131-6081, Albuquerque, NM aut NATIONALLICENCE 700 1- Sun S. Center for High Technology Materials, University of New Mexico, 87131-6081, Albuquerque, NM aut NATIONALLICENCE 700 1- Srinivasan S. Center for High Technology Materials, University of New Mexico, 87131-6081, Albuquerque, NM aut NATIONALLICENCE 700 1- Malloy K. Center for High Technology Materials, University of New Mexico, 87131-6081, Albuquerque, NM aut NATIONALLICENCE 700 1- Hersee S. Center for High Technology Materials, University of New Mexico, 87131-6081, Albuquerque, NM aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/11(1992-11-01), 1051-1056 0361-5235 21:11<1051 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer