caa a22 4500 469092688 CHVBK 20180323133022.0 cr unu---uuuuu 170328e19921101xx s 000 0 eng 10.1007/BF02665882 doi (NATIONALLICENCE)springer-10.1007/BF02665882 Growth of AlxGa1−x as by metalorganic chemical vapor deposition using trimethylgallium and trimethylamine alane [Elektronische Daten] [V. Sundaram, L. Fraas, C. Samuel] High-quality AlxGa1−xAs layers with aluminum arsenide contentx up to 0.34 have been grown in a low pressure metalorganic chemical vapor deposition (MOCVD) system using trimethylgallium (TMG), trimethylamine alane (TMAA) and arsine. The carbon content in these films depended on growth conditions but was in general lower than in those obtained with trimethylaluminum (TMA) instead of TMAA in the same reactor under similar conditions. Unlike TMA grown layers, the TMAA grown AlxGa1−xAs layers, (grown at much lower temperature—down to 650° C), exhibited room temperature photolu-minescence (PL). Low temperature (25 K) PL from these films showed sharp bound exciton peaks with a line width of 5.1 meV for Al0.25Ga0.75As. A 39 period Al0.28Ga0.72As (5.5 nm)/GaAs (8.0 nm) superlattice grown at 650° C showed a strong PL peak at 25 K with a line width of 5.5 meV attesting to the high quality of these layers. TMS, 1992 MOCVD nationallicence AlGaAs nationallicence TMG nationallicence TMA nationallicence Trimethylamine alane nationallicence Sundaram V. Boeing Defense & Space Group, P.O. Box 3999, 98121, Seattle, Washington aut Fraas L. Boeing Defense & Space Group, P.O. Box 3999, 98121, Seattle, Washington aut Samuel C. Boeing Defense & Space Group, P.O. Box 3999, 98121, Seattle, Washington aut Journal of Electronic Materials Springer-Verlag 21/11(1992-11-01), 1047-1050 0361-5235 21:11<1047 1992 21 11664 https://doi.org/10.1007/BF02665882 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665882 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Sundaram V. Boeing Defense & Space Group, P.O. Box 3999, 98121, Seattle, Washington aut NATIONALLICENCE 700 1- Fraas L. Boeing Defense & Space Group, P.O. Box 3999, 98121, Seattle, Washington aut NATIONALLICENCE 700 1- Samuel C. Boeing Defense & Space Group, P.O. Box 3999, 98121, Seattle, Washington aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/11(1992-11-01), 1047-1050 0361-5235 21:11<1047 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer