caa a22 4500 469092696 CHVBK 20180323133022.0 cr unu---uuuuu 170328e19921101xx s 000 0 eng 10.1007/BF02665881 doi (NATIONALLICENCE)springer-10.1007/BF02665881 Ion-assisted molecular beam epitaxy of GaAs on Si(100) [Elektronische Daten] [C. Choi, R. Ai, S. Barnett] GaAs was grown by molecular beam epitaxy (MBE) and ion-assisted MBE on Si(100) substrates. Three-dimensional (3D) island nucleation, observed during MBE growth, was eliminated during ion-assisted MBE when the ion energyE was >25 eV and the product ofE and the current densityJ was ≈6-12 eV mA/cm2. IncreasingEJ to ≈15 eV mA/ cm2 resulted in excessive ion damage. Decreasing the substrate temperature from 280 to 580° C during ion-assisted MBE yielded a slight decrease in surface roughness, and flatter surfaces were obtained for lower As4/Ga flux ratios. The suppression of 3D island nucleation led to an improvement in the crystalline perfection of thicker GaAs films. For example, the x-ray diffraction rocking-curve full-width-at-half-maximum values for 0.5 μm thick films grown at 380° C decreased from 1700 arcsec to 1350 arcsec when ion irradiation was used during nucleation. IAMBE allowed nucleation of thin, relatively flat-surfaced GaAs films even at 580° C, resulting in FWHM values of 1850 arcsec for 0.14 /μm thick films. TMS, 1992 GaAs on Si nationallicence Ion-assisted molecular beam epitaxy nationallicence Film nucleation nationallicence Defect densities nationallicence TEM nationallicence Choi C. Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, 60208, Evanston, IL aut Ai R. Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, 60208, Evanston, IL aut Barnett S. Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, 60208, Evanston, IL aut Journal of Electronic Materials Springer-Verlag 21/11(1992-11-01), 1041-1046 0361-5235 21:11<1041 1992 21 11664 https://doi.org/10.1007/BF02665881 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665881 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Choi C. Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, 60208, Evanston, IL aut NATIONALLICENCE 700 1- Ai R. Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, 60208, Evanston, IL aut NATIONALLICENCE 700 1- Barnett S. Department of Materials Science and Engineering and the Materials Research Center, Northwestern University, 60208, Evanston, IL aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/11(1992-11-01), 1041-1046 0361-5235 21:11<1041 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer