caa a22 4500 46909270X CHVBK 20180323133022.0 cr unu---uuuuu 170328e19921101xx s 000 0 eng 10.1007/BF02665884 doi (NATIONALLICENCE)springer-10.1007/BF02665884 Molecular heterostructure devices composed of langmuir-blodgett films of conducting polymers [Elektronische Daten] [E. Punkka, M. Rubner] Organic heterostructures have been fabricated by alternating the deposition of monoand multilayers of undoped poly(3-hexylthiophene) and doped polypyrrole prepared by the Langmuir-Blodgett technique. The dopant profiles of the structures have been electrically characterized by incorporating the polymer layers as the active semiconductive material into metal-insulator-semiconductor and Schottky barrier device configurations. The dopant concentrations were evaluated by capacitance-voltage measurements. The results indicate modulated dopant profiles and a possible transfer of dopants. The dopant concentrations differ by about an order of magnitude between the undoped and doped layers. The Schottky barriers become thinner the closer the doped polypyrrole monolayer lies to the Schottky electrode. TMS, 1992 Conducting polymers nationallicence Langmuir-Blodgett films nationallicence Organic semiconductor devices nationallicence Punkka E. Department of Materials Science and Engineering, Massachusetts Institute of Technology, 02139, Cambridge, Massachusetts, USA aut Rubner M. Department of Materials Science and Engineering, Massachusetts Institute of Technology, 02139, Cambridge, Massachusetts, USA aut Journal of Electronic Materials Springer-Verlag 21/11(1992-11-01), 1057-1063 0361-5235 21:11<1057 1992 21 11664 https://doi.org/10.1007/BF02665884 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02665884 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Punkka E. Department of Materials Science and Engineering, Massachusetts Institute of Technology, 02139, Cambridge, Massachusetts, USA aut NATIONALLICENCE 700 1- Rubner M. Department of Materials Science and Engineering, Massachusetts Institute of Technology, 02139, Cambridge, Massachusetts, USA aut NATIONALLICENCE 773 0- Journal of Electronic Materials Springer-Verlag 21/11(1992-11-01), 1057-1063 0361-5235 21:11<1057 1992 21 11664 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer