caa a22 4500 469126302 CHVBK 20180323133151.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02697406 doi (NATIONALLICENCE)springer-10.1007/BF02697406 Simulation of silicon film growth by silane decomposition at low pressures and temperatures [Elektronische Daten] [Ju Lee, Sang Moon, Shi-Woo Rhee] Silicon film deposition by silane decomposition in LPCVD (Low Pressure Chemical Vapor Deposition) process has been simulated by numerical computation of the governing transport and reaction equations, assuming that the rate of silane decomposition in the gas phase controls the overall film growth rate. The film growth rate and the film uniformity increase with the reactant flow rate when the flow rate is relatively low, but they decrease at higher flow rates due to the negative effect of the reduced reaction time in the reactor. Accordingly, the film deposition process is optimized by controlling the reactant flow rate so that the position of the maximum SiH4-decomposition rate in the gas phase is located above the substrate region. With a larger degree of the substrate tilting, the growth rate decreases but the film uniformity is improved. The film uniformity is also improved when the pressure is low. Korean Institute of Chemical Engineering, 1992 Lee Ju Dept. of Chem. Eng., Seoul National University, Kwanak-ku, Shinlim-dong, San 56-1, Seoul, Korea aut Moon Sang Dept. of Chem. Eng., Seoul National University, Kwanak-ku, Shinlim-dong, San 56-1, Seoul, Korea aut Rhee Shi-Woo Dept. of Chem. Eng., Seoul National University, Kwanak-ku, Shinlim-dong, San 56-1, Seoul, Korea aut Korean Journal of Chemical Engineering Springer-Verlag 9/1(1992-01-01), 8-15 0256-1115 9:1<8 1992 9 11814 https://doi.org/10.1007/BF02697406 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02697406 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lee Ju Dept. of Chem. Eng., Seoul National University, Kwanak-ku, Shinlim-dong, San 56-1, Seoul, Korea aut NATIONALLICENCE 700 1- Moon Sang Dept. of Chem. Eng., Seoul National University, Kwanak-ku, Shinlim-dong, San 56-1, Seoul, Korea aut NATIONALLICENCE 700 1- Rhee Shi-Woo Dept. of Chem. Eng., Seoul National University, Kwanak-ku, Shinlim-dong, San 56-1, Seoul, Korea aut NATIONALLICENCE 773 0- Korean Journal of Chemical Engineering Springer-Verlag 9/1(1992-01-01), 8-15 0256-1115 9:1<8 1992 9 11814 Metadata rights reserved Springer special CC-BY-NC licence nationallicence SWISSBIB 469126302 BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer