caa a22 4500 469126329 CHVBK 20180323133151.0 cr unu---uuuuu 170328e19920101xx s 000 0 eng 10.1007/BF02697409 doi (NATIONALLICENCE)springer-10.1007/BF02697409 Simulation of silicon film growth by silane decomposition in a mercury-sensitized photo-CVD process [Elektronische Daten] [Ju Lee, Sang Moon, Shi-Woo Rhee] Deposition of silicon film by a mercury-sensitized photo-CVD process has been simulated by numerical solution of governing equations with proper boundary conditions. The results indicate that the film deposition rate is controlled by homogeneous decomposition of the reactant, silane, in the gas phase. The growth rate increases but the film uniformity decreases with the increase of reactant inlet concentration. Increase in the reactant flow rate decreases the deposition rate but gives no effect on the film uniformity. Among process variables, the light intensity and the mercurysaturator temperature are important parameters. Korean Institute of Chemical Engineering, 1992 Lee Ju Dept. of Chemical Engineering, Seoul National University, Kwanak-ku, Shinlim-dong, San 56-1, Seoul, Korea aut Moon Sang Dept. of Chemical Engineering, Seoul National University, Kwanak-ku, Shinlim-dong, San 56-1, Seoul, Korea aut Rhee Shi-Woo Dept. of Chemical Engineering, Seoul National University, Kwanak-ku, Shinlim-dong, San 56-1, Seoul, Korea aut Korean Journal of Chemical Engineering Springer-Verlag 9/1(1992-01-01), 29-36 0256-1115 9:1<29 1992 9 11814 https://doi.org/10.1007/BF02697409 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02697409 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Lee Ju Dept. of Chemical Engineering, Seoul National University, Kwanak-ku, Shinlim-dong, San 56-1, Seoul, Korea aut NATIONALLICENCE 700 1- Moon Sang Dept. of Chemical Engineering, Seoul National University, Kwanak-ku, Shinlim-dong, San 56-1, Seoul, Korea aut NATIONALLICENCE 700 1- Rhee Shi-Woo Dept. of Chemical Engineering, Seoul National University, Kwanak-ku, Shinlim-dong, San 56-1, Seoul, Korea aut NATIONALLICENCE 773 0- Korean Journal of Chemical Engineering Springer-Verlag 9/1(1992-01-01), 29-36 0256-1115 9:1<29 1992 9 11814 Metadata rights reserved Springer special CC-BY-NC licence nationallicence SWISSBIB 469126302 BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer