caa a22 4500 469126469 CHVBK 20180323133152.0 cr unu---uuuuu 170328e19921001xx s 000 0 eng 10.1007/BF02705292 doi (NATIONALLICENCE)springer-10.1007/BF02705292 XPS study on oxide ETCH residue and cleaning [Elektronische Daten] [Jae Kim, Eun Lee, Ik Kim, Woo Kim, Seon Kim] A layer structure, chemical composition and cleaning process of oxide dry etch residue on silicon substrate were studied. I: was observed that the structure of the etch residue consisted of CFx-polymer/SiOyCz. The ratio of y and z in SiOyCz layer is monotonously changing with depth: y/z is maximum at the interface of CFy-polymer and SiOyCz, and minimum at the interface of SiOyCz, and silicon substrate. Two step cleaning was proposed: dry and wet cleaning. The most effective process was silicon light etch (CF4,/O2) REMOTE PLASMA), followed by NH4OH-H2O2 mixture and HF dip. From X-Ray Photoelectron Spectroscopy (XPS) data, it was found that oxide etch residue was completely removed by dry and wet cleaning. Korean Institute of Chemical Engineering, 1992 Kim Jae Semiconductor Research Laboratory GoldStar Electron Company, Ltd., Woomyun-dong, Seocho-gu, Seoul, Korea aut Lee Eun Semiconductor Research Laboratory GoldStar Electron Company, Ltd., Woomyun-dong, Seocho-gu, Seoul, Korea aut Kim Ik Semiconductor Research Laboratory GoldStar Electron Company, Ltd., Woomyun-dong, Seocho-gu, Seoul, Korea aut Kim Woo Semiconductor Research Laboratory GoldStar Electron Company, Ltd., Woomyun-dong, Seocho-gu, Seoul, Korea aut Kim Seon Semiconductor Research Laboratory GoldStar Electron Company, Ltd., Woomyun-dong, Seocho-gu, Seoul, Korea aut Korean Journal of Chemical Engineering Springer-Verlag 9/4(1992-10-01), 194-198 0256-1115 9:4<194 1992 9 11814 https://doi.org/10.1007/BF02705292 text/html Onlinezugriff via DOI 1 research-article jats NATIONALLICENCE 856 40 https://doi.org/10.1007/BF02705292 text/html Onlinezugriff via DOI NATIONALLICENCE 700 1- Kim Jae Semiconductor Research Laboratory GoldStar Electron Company, Ltd., Woomyun-dong, Seocho-gu, Seoul, Korea aut NATIONALLICENCE 700 1- Lee Eun Semiconductor Research Laboratory GoldStar Electron Company, Ltd., Woomyun-dong, Seocho-gu, Seoul, Korea aut NATIONALLICENCE 700 1- Kim Ik Semiconductor Research Laboratory GoldStar Electron Company, Ltd., Woomyun-dong, Seocho-gu, Seoul, Korea aut NATIONALLICENCE 700 1- Kim Woo Semiconductor Research Laboratory GoldStar Electron Company, Ltd., Woomyun-dong, Seocho-gu, Seoul, Korea aut NATIONALLICENCE 700 1- Kim Seon Semiconductor Research Laboratory GoldStar Electron Company, Ltd., Woomyun-dong, Seocho-gu, Seoul, Korea aut NATIONALLICENCE 773 0- Korean Journal of Chemical Engineering Springer-Verlag 9/4(1992-10-01), 194-198 0256-1115 9:4<194 1992 9 11814 Metadata rights reserved Springer special CC-BY-NC licence nationallicence BK010053 XK010053 XK010000 NATIONALLICENCE NATIONALLICENCE NL-springer