Effect of the Arsenic Concentration on the Characteristics of the Growth Step Echelon in GaAs Epitaxy

Verfasser / Beitragende:
[I. Ivonin, L. Lavrent'eva, G. Aleksandrova, L. Devyat'yarova]
Ort, Verlag, Jahr:
2002
Enthalten in:
Russian Physics Journal, 45/10(2002-10-01), 997-1000
Format:
Artikel (online)
ID: 471047880