Influence of the Substrate Orientation on the Silicon Capture into A - and B - Sublattices of Gallium Arsenide in Molecular Beam Epitaxy
Gespeichert in:
Verfasser / Beitragende:
[I. Bobrovnikova, M. Vilisova, I. Ivonin, L. Lavrent'eva, V. Preobrazhenskii, M. Putyato, B. Semyagin, S. Subach, S. Toropov]
Ort, Verlag, Jahr:
2002
Enthalten in:
Russian Physics Journal, 45/4(2002-04-01), 414-418
Format:
Artikel (online)
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