Low-Temperature Molecular-Beam Epitaxy of GaAs: Effect of Excess Arsenic on the Structure and Properties of the GaAs Layers

Verfasser / Beitragende:
[L. Lavrent'eva, M. Vilisova, V. Preobrazhenskii, V. Chaldyshev]
Ort, Verlag, Jahr:
2002
Enthalten in:
Russian Physics Journal, 45/8(2002-08-01), 735-752
Format:
Artikel (online)
ID: 471048194