Features of Segregation of Doping Impurities of V(a) Subgroup Elements on Angular Configurations of the Silicon/Silicon Dioxide Oxidation Boundary
Gespeichert in:
Verfasser / Beitragende:
[G. Tarnavskii, S. Shpak, M. Obrecht]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Engineering Physics and Thermophysics, 75/1(2002-01-01), 190-197
Format:
Artikel (online)
Online Zugang: