Properties of the GaAs oxide layer grown by the liquid-phase chemical-enhanced technique on the S-passivated GaAs surface

Verfasser / Beitragende:
[Dei-Wei Chou, Ruey-Fa Lou, Hwei-Heng Wang, Yeong-Her Wang, Mau-Phon Houng]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/1(2002-01-01), 71-75
Format:
Artikel (online)
ID: 47114701X