Microstructure of GaN deposited by lateral confined epitaxy on patterned Si (111)

Verfasser / Beitragende:
[Feng Wu, Shai Zamir, Boris Meyler, Joseph Salzman, Yuval Golan]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/1(2002-01-01), 88-93
Format:
Artikel (online)
ID: 471147052