A comparison of graphite and AlN caps used for annealing ion-implanted SiC

Verfasser / Beitragende:
[K. Jones, M. Derenge, P. Shah, T. Zheleva, M. Ervin, K. Kirchner, M. Wood, C. Thomas, M. Spencer, O. Holland, R. Vispute]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/6(2002-06-01), 568-575
Format:
Artikel (online)
ID: 471147176