Fabrication of self-aligned graded junction termination extensions with applications to 4H-SiC P-N diodes

Verfasser / Beitragende:
[J. Merrett, T. Isaacs-Smith, D. Sheridan, J. Williams]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/6(2002-06-01), 635-639
Format:
Artikel (online)
ID: 471147192