HgCdTe composition determination using spectroscopic ellipsometry during molecular beam epitaxy growth of near-infrared avalanche photodiode device structures

Verfasser / Beitragende:
[T. De Lyon, G. Olson, J. Roth, J. Jensen, A. Hunter, M. Jack, S. Bailey]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/7(2002-07-01), 688-693
Format:
Artikel (online)
ID: 471147532