Development of a high-selectivity process for electron cyclotron resonance plasma etching of II-VI semiconductors

Verfasser / Beitragende:
[A. Stoltz, J. Benson, M. thomas, P. Boyd, M. Martinka, J. Dinan]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/7(2002-07-01), 749-753
Format:
Artikel (online)
ID: 471147583