Thermal characteristics of InP, InAlAs, and AlGaAsSb metamorphic buffer layers used in In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates
Gespeichert in:
Verfasser / Beitragende:
[Y. Kim, M. Rodwell, A. Gossard]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/3(2002-03-01), 196-199
Format:
Artikel (online)
Online Zugang: