The influence of As and Ga prelayers on the metal-organic chemical vapor deposition of GaAs/Ge

Verfasser / Beitragende:
[R. Tyagi, M. Singh, M. Thirumavalavan, T. Srinivasan, S. Agarwal]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/3(2002-03-01), 234-237
Format:
Artikel (online)
ID: 471147958