Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

Verfasser / Beitragende:
[Toshiki Makimoto, Kazuhide Kumarkura, Toshio Nishida, Naoki Kobayashi]
Ort, Verlag, Jahr:
2002
Enthalten in:
Journal of Electronic Materials, 31/4(2002-04-01), 313-315
Format:
Artikel (online)
ID: 471148350